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| JMnic Product Specification Silicon NPN Power Transistors 2SC5669 DESCRIPTION With TO-3PN package Complement to type 2SA2031 Wide area of safe operation Large current capacitance APPLICATIONS For audio frequency output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25ae PC Collectorl power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 140 150 -55~150 ae ae CONDITIONS Open emitter Open base Open collector VALUE 250 230 6 15 30 2.5 W UNIT V V V A A JMnic Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SC5669 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE= 230 V V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 250 V V(BREBO Emitter-base breakdown voltage IE=5mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=7.5 A;IB=0.75A 0.2 2.0 V VBE Base-emitter saturation voltage IC=7.5A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=250V; IE=0 100 |I A IEBO Emitter cut-off current VEB=4V; IC=0 100 |I A hFE-1 DC current gain IC=1A ; VCE=5V 60 160 hFE-2 DC current gain IC=7.5A ; VCE=5V 35 COB Output capacitance IE=0 ; VCB=10V,f=1MHz 200 pF fT Transition frequency IC=1A ; VCE=5V 15 MHz Switching times ton Turn-on time IC=7.5A;RL=6.67| IB1=-IB2=0.75A VCC=50V 0.56 |I s tstg Storage time 3.3 |I s tf Fall time 0.4 |I s 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5669 Fig.2 Outline dimensions 3 JMnic Silicon NPN Power Transistors 2SC5669 4 |
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